Related papers: Quantized current of a hybrid single-electron tran…
We present a theoretical study of the electronic transport through a many-level quantum dot driven by time-dependent signals applied at the contacts to the leads. If the barriers oscillate out of phase the system operates like a turnstile…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
We study a superconducting single-charge transistor, where the coherence of Cooper pair tunneling is destroyed by the coupling to a tunable dissipative environment. Sequential tunneling and cotunneling processes are analyzed to construct…
Magnetic topological insulators (MTIs) host topologically protected edge states, but the role that these edge states play in electronic transport remains unclear. Using scanning superconducting quantum interference device (SQUID)…
In this communication we consider generalities of the proximity effect in a contact between a conventional $s$-wave superconductor (S) nano-island and a thin film of a topological insulator (TI). A local hybridization coupling mechanism is…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…
The current through a carbon nanotube field-effect transistor (CNFET) with cylindrical gate electrode is calculated using the nonequilibrium Greens function method in a tight-binding approximation. The obtained result is in good agreement…
We propose a new type of molecular transistor, the Quantum Interference Effect Transistor (QuIET), based on tunable current suppression due to quantum interference. We show that any aromatic hydrocarbon ring has two-lead configurations for…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES…
We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states (DOS) in the superconductor. In the limit of a…
Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…
We show that the nature of quantum phases around the superconductor-insulator transition (SIT) is controlled by charge-vortex topological interactions and does not depend on the details of material parameters and disorder. We find three…
We investigate a superconducting single-electron transistor capacitively coupled to a nanomechanical oscillator and focus on the double Josephson quasiparticle resonance. The existence of two coherent Cooper pair tunneling events is shown…
We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
The radio-frequency Single-Electron Box is becoming an attractive charge sensor for semiconductor-based quantum computing devices due to its high sensitivity and small footprint, which facilitates the design of highly connected qubit…
Superconductor-to-Insulator transition (SIT) is a phenomenon occurring for highly disordered superconductors and is suitable for a superconducting switch development. SIT has been demonstrated to be induced by different external parameters…
Transport properties of ferromagnetic/non-magnetic/ferromagnetic single electron transistors are investigated as a function of external magnetic field, temperature, bias and gate voltage. By designing the magnetic electrodes to have…