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UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to…
Ultrafast laser welding provides a promising approach for high precision integration of transparent and metallic materials. However, its practical application remains constrained by the precise regulation of the interfacial gap. This study…
We present here an original process combining top-down and bottom-up approaches by annealing a thin gold film evaporated onto a hole template made by etching a PS-PMMA copolymer film. Such process allows a better control of the gold…
$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…
Electro-optic modulators are fundamental components in atomic physics experiments, including trapped-ion systems used in precision metrology and quantum computing. To enable scalable photonic integration, we design and analyze an integrated…
Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic modulation. Its CMOS-compatibility could…
The transport of optically excited, hot electrons in heterostructures is analyzed by femtosecond, time-resolved two-photon photoelectron emission spectroscopy (2PPE) for epitaxial Au/Fe/MgO(001). We compare the temporal evolution of the…
Shallow undoped Si/SiGe quantum wells are the leading platforms for hosting quantum processors based on spin-qubits. The ohmic contacts to the electron gas in these systems are accomplished by ion-implantation technique since the…
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of…
The present work illustrates a novel approach for the maskless and resistless fabrication of nanopatterned metal layers on Si substrates, based on the combination of nanomechanical surface modification techniques (such as nanoindentation…
The heterogeneous evolution of microstructure in a single Cu/SAC305/Cu solder joint is investigated using in-situ thermal cycling combined with electron backscatter diffraction (EBSD). Local deformation due to thermal expansion mismatch…
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin…
The mechanisms of fast low-temperature Spark Plasma Sintering (SPS) of W + 10% wt. Ni powders were investigated. The powder compositions were obtained in two methods: (i) by mixing W and Ni powders in a specified ratio (hereinafter referred…
We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron sized metal…
The technique of laser-assisted nanoimprinting lithography (LAN) has been proposed to utilize an excimer laser to irradiate through a quartz mold and melts a thin polymer film on the substrate for micro- to nano-scaled fabrications. In the…
Metal-assisted chemical etching of silicon is a promising method for fabricating nanostructures with a high aspect ratio. To define a pattern for the catalyst, lift-off processes are commonly used. The lift-off step however is often a…
The interplay between quarter-filled and half-filled umklapp scattering has been examined by applying the renormalization group method to a one-dimensional quarter-filled electron system with dimerization, on-site (U) and nearest-neighbor…
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds (us) strongly limit…
Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved and core-level photoemission. Fe, Nb and Ag were evaporated onto Bi1.5Sb0.5Te1.7Se1.3 (BSTS)…
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical…