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A general metallic mirror (i.e., a flat metallic surface) has been a popular optical component that can contribute broadband light absorption to thin-film optoelectronic devices; nonetheless, such electric mirror with a reversal of…
We report on the development of InP-based semiconductor amplifiers with a U-bend waveguide geometry having the input and output ports on one facet only. This waveguide geometry simplifies the chip alignment during the hybrid integration on…
The creep behaviour and microstructural evolution of a Sn-3Ag-0.5Cu wt.% sample with a columnar microstructure have been investigated through in-situ creep testing under constant stress of 30 MPa at 298 K. This is important, as 298 K is…
A combinatorial thin-film synthesis approach combined with a high throughput analysis methodology was successfully applied to synthesize TiN/Ni coatings with optimum mechanical properties. The synthesis approach consists of the deposition…
$\alpha$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to…
To increase density of superconductor digital and neuromorphic circuits by 10x and reach integration scale of $10^8$ Josephson junctions (JJs) per chip, we developed a new fabrication process on 200-mm wafers, using self-shunted…
Antimony trisulfide ($Sb_{2}S_{3}$), as an emerging material for integrated photonic devices, has attracted significant attention due to its high index, low loss, and phase-changing property in the optical regime. However, conventional…
We describe the fabrication and characterization of solid 3-dimensional electrodes in direct contact with microfluidic channels, implemented using a single photolithography step, allowing operation in high-dielectric constant media.…
The overall quality of multilayer thin films prepared by electrodeposition is strongly influenced by the surface and interface roughness which increases with the layer number. For that very reason the reliable analysis of the first few…
We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex…
Biosensors exploiting long-range surface plasmon polariton (LRSPP) waveguides comprised of Au stripes embedded in Cytop with integrated and encapsulated microfluidic channels are fabricated and demonstrated. A fabrication approach was…
We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change growth conditions from N-rich to metal-rich in order to…
Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was…
Photoresponse of bimetallic Au-Ag nanoparticle embedded soda glass (Au-Ag@SG) substrate is reported for surface plasmon assisted optical switching using 808 nm excitation. Au-Ag@SG system is made by an ion beam technique where Ag^+ is…
The miscibility of Au and Li exhibits a potential application as an adhesion layer and electrode material in secondary batteries. Here, to explore alloying properties, we constructed a neural network potential (NNP) of Au-Li binary systems…
Metastable cubic tin(II) sulfide ($\pi$-SnS) is an earth-abundant semiconductor whose three-dimensionally bonded chiral lattice may overcome the short minority-carrier lifetime of orthorhombic SnS while maintaining a near-ideal bandgap for…
The Silicon Electron Multiplier (SiEM) sensor is a novel sensor concept that enables charge multiplication by high electric fields generated by embedded metal electrodes within the sensor bulk. Metal assisted chemical etching (MacEtch) in…
The thermodynamic properties of Bi-Sn were studied at 600 and 900K using a quasi-lattice theory. After successful fitting of Gibbs free energies of mixing and thermodynamic activities, the fitting parameters were used to investigate the…
This paper presents the different processing steps of a new generic surface micromachining module for MEMS hermetic packaging at temperatures around 180 degrees C based on nickel plating and photoresist sacrificial layers. The advantages of…
We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either…