We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change growth conditions from N-rich to metal-rich in order to sequentially form a roughened GaN layer, relaxed (In,Ga)N nanostructures, and a coalesced, smooth (In,Ga)N layer. Samples are analyzed by scanning electron and atomic force microscopy, X-ray diffraction, as well as photo- and cathodoluminescence spectroscopy. Compared to a reference layer grown directly on GaN, the pseudo-substrate exhibits a higher In content (~0.3), strain relaxation degree (~80%), narrower photoluminescence linewidth, and larger area fraction of bright regions in cathodoluminescence maps, showing the benefits of the three-step growth protocol. This straightforward approach does not necessitate any ex-situ processing and could enable the scalable fabrication of (In,Ga)N pseudo-substrates for high-efficiency red-emitting (In,Ga)N devices.
@article{arxiv.2512.15565,
title = {Fabrication of (In,Ga)N pseudo-substrates by a three-step growth protocol without ex-situ processing},
author = {Huaide Zhang and Aidan F. Campbell and Jingxuan Kang and Jonas Laehnemann and Oliver Brandt and Lutz Geelhaar},
journal= {arXiv preprint arXiv:2512.15565},
year = {2025}
}