Related papers: A mechanism for unipolar resistance switching in o…
Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and…
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and…
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical…
We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal…
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
Bipolar resistive switching using organic molecule is very promising for memory application owing to their advantages like simple device structure, low manufacturing cost, their stability and flexibility etc. Herein we report…
We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide…
The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…
The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of…
Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…