Related papers: Experimental realization of a silicon spin field-e…
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…
The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…
We analyze spin-dependent transport through a spin-diode in the presence of spin-flip and under influence of temperature bias. The current polarization and the spin accumulation are investigated in detail by means of reduced density matrix.…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
The effect of spin mixing due to thermal spin waves and temperature dependence of hot electron spin polarization to the collector current in a spin-valve transistor has been theoretically explored. We calculate the collector current as well…
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
The spin-transfer effect is investigated for the vortex state of a magnetic nanodot. A spin current is shown to act similarly to an effective magnetic field perpendicular to the nanodot. Then a vortex with magnetization (polarity) parallel…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
Ballistic spin transport through waveguides, with symmetric or asymmetric double stubs attached to them periodically, is studied systematically in the presence of a weak spin-orbit coupling that makes the electrons precess. By an…
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…
The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orders of magnitude larger in semiconductors than in metals,…
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through…
Ever since its discovery, the electron spin has only been measured or manipulated through the application of an electromagnetic force acting on the associated magnetic moment. In this work, we propose a spin Aharonov-Bohm effect in which…
The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field…