Related papers: Substrate temperature changes during MBE growth of…
Significant grain growth is observed during the high-pressure phase transformations (PTs) at room temperature within an hour for various materials. However, no existing theory explains this phenomenon since nanocrystals do not grow at room…
The dissipation of energy in dynamic force microscopy is usually described in terms of an adhesion hysteresis mechanism. This mechanism should become less efficient with increasing temperature. To verify this prediction we have measured…
Understanding the growth dynamics of the microbubbles produced by plasmonic heating can benefit a wide range of applications like microfluidics, catalysis, micro-patterning and photo-thermal energy conversion. Usually, surface plasmonic…
The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…
Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of…
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese…
Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated.…
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610$^{\circ}$C range.…
Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%.…
A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes…
Optical properties of the short period {CdO/ZnO} superlattices grown by plasma assisted MBE were analyzed. The superlattice (SLs) structures were successfully obtained at different growth temperatures from 360 to 550 {\deg}C. Interestingly,…
We report on the appearance of magnetic stripes in MnAs/GaAs(100) epilayers at temperatures well below the ferromagnetic transition of the system. The study has been performed by ferromagnetic resonance experiments (FMR) on MnAs epilayers…
We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest Tc values for growth temperatures very…
Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a nearly phase-pure zinc blende (cubic) structure…
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is…
The shift in condensation temperature caused by interactions is studied up to second order in the s-wave scattering length in a Bose-Einstein condensate trapped in a temperature-dependent three-dimensional generic potential. With no…
We present measurements of the dissipation and frequency shift in nanomechanical gold resonators at temperatures down to 10 mK. The resonators were fabricated as doubly-clamped beams above a GaAs substrate and actuated magnetomotively.…
The thermal expansion of the wide band gap semiconductor MgSiN$_{2}$ has been determined using density functional calculations in combination with the quasi-harmonic approximation. We find that the thermal expansion is rather small in good…
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…
We have conducted temperature dependent Angle Resolved Photoemission Spectroscopy (ARPES) study of the electronic structure of n-, p- type PbTe, PbSe and PbS, which are pre- mier thermoelectric materials. Our ARPES measurements on them…