English

UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films

Applied Physics 2020-01-10 v1 Materials Science

Abstract

We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithog-raphy

Keywords

Cite

@article{arxiv.2001.03054,
  title  = {UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films},
  author = {Alexander Cheremisin and Vadim Putrolaynen and Andrei Velichko and Alexander Pergament and Nikolay Kuldin and Alexander Grishin},
  journal= {arXiv preprint arXiv:2001.03054},
  year   = {2020}
}

Comments

4 pages, 2 figures