Electrical and optical properties of amorphous vanadium oxide thin films obtained by electrochemical anodic oxidation are studied. It is shown that under cathodic polarization the hydrogen insertion into vanadium oxide from an electrolyte occurs. Metal-insulator transition in amorphous HxVO2 is found to be preserved up to high concentration (x ~ 1.5) of hydrogen. Memory switching with the N-type negative differential resistance, associated with the H+ ionic transfer, is observed in "V/hydrated amorphous vanadium oxide/Au" sandwich structures.
@article{arxiv.2001.02418,
title = {Electrical and optical properties of hydrated amorphous vanadium oxide},
author = {Alexander Pergament and Andrei Velichko and Vadim Putrolaynen and Genrih Stefanovich and Nikolai Kuldin and Alexander Cheremisin and Ivan Feklistov and Nadezhda Khomlyuk},
journal= {arXiv preprint arXiv:2001.02418},
year = {2020}
}