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SPICE Simulation of tunnel FET aiming at 32 kHz crystal-oscillator operation

Applied Physics 2017-10-23 v1 Mesoscale and Nanoscale Physics Emerging Technologies

Abstract

We numerically investigate the possibility of using Tunnel field-effect transistor (TFET) in a 32 kHz crystal oscillator circuit to reduce power consumption. A simulation using SPICE (Simulation Program with Integrated Circuit Emphasis) is carried out based on a conventional CMOS transistor model. It is shown that the power consumption of TFET is one-tenth that of conventional low-power CMOS.

Keywords

Cite

@article{arxiv.1710.07375,
  title  = {SPICE Simulation of tunnel FET aiming at 32 kHz crystal-oscillator operation},
  author = {Tetsufumi Tanamoto and Chika Tanaka and Satoshi Takaya and Masato Koyama},
  journal= {arXiv preprint arXiv:1710.07375},
  year   = {2017}
}

Comments

7 pages, 2 tables