Quasi-ballistic transport in HgTe quantum-well nanostructures

V. Daumer; I. Golombek; M. Gbordzoe; E. G. Novik; V. Hock; C. R. Becker; H. Buhmann; L. W. Molenkamp

doi:10.1063/1.1602170

Quasi-ballistic transport in HgTe quantum-well nanostructures

Mesoscale and Nanoscale Physics 2009-11-10 v2

Authors: V. Daumer , I. Golombek , M. Gbordzoe , E. G. Novik , V. Hock , C. R. Becker , H. Buhmann , L. W. Molenkamp

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Abstract

The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum-wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 $\mu$ m. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semi-classical electron trajectories show good agreement with the experiment.

Keywords

HgTe quantum wells ballistic transport nanoscale devices Monte Carlo simulation electron trajectories

Cite

@article{arxiv.cond-mat/0305078,
  title  = {Quasi-ballistic transport in HgTe quantum-well nanostructures},
  author = {V. Daumer and I. Golombek and M. Gbordzoe and E. G. Novik and V. Hock and C. R. Becker and H. Buhmann and L. W. Molenkamp},
  journal= {arXiv preprint arXiv:cond-mat/0305078},
  year   = {2009}
}

Comments

3 pages, 3 figures; minor revisions: replaced "inelastic mean free path" with "transport mean free path"; corrected typing errors; restructered most paragraphs for easier reading; accepted for publication in APL

Quasi-ballistic transport in HgTe quantum-well nanostructures

Abstract

Keywords

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