Quantum Transport in Semiconductor Nanostructures
Abstract
I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).
Cite
@article{arxiv.cond-mat/0412664,
title = {Quantum Transport in Semiconductor Nanostructures},
author = {C. W. J. Beenakker and H. van Houten},
journal= {arXiv preprint arXiv:cond-mat/0412664},
year = {2013}
}
Comments
111 pages including 109 figures; this review from 1991 has retained much of its usefulness, but it was not yet available electronically