The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole scattering processes at low temperatures. We apply the Boltzmann transport equation approach to study the effect of electron-hole scattering in a semimetal QW. The calculated temperature behavior of 2D semimetal resistivity demonstrates an excellent agreement with experimental findings.
@article{arxiv.2403.13387,
title = {Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well},
author = {A. V. Snegirev and V. M. Kovalev and M. V. Entin and E. B. Olshanetsky and N. N. Mikhailov and Z. D. Kvon},
journal= {arXiv preprint arXiv:2403.13387},
year = {2024}
}