English

Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface

Strongly Correlated Electrons 2009-11-13 v1
Authors: Y. Hotta , T. Susaki , H. Y. Hwang
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Abstract

We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2 polar discontinuity is conducting, exhibiting a LaVO_3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_2/SrO/TiO_2 interface, formed by inserting a single layer of bulk metallic SrVO_3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions.

Keywords

oxide heterostructures oxide interfaces

Cite

@article{arxiv.0710.2174,
  title  = {Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface},
  author = {Y. Hotta and T. Susaki and H. Y. Hwang},
  journal= {arXiv preprint arXiv:0710.2174},
  year   = {2009}
}

Comments

18 pages, 5 figures

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