We present an ab initio study of the (001) interfaces between two insulating perovskites, the polar LaAlO3 and the nonpolar SrTiO3. We observe an insulating-to-metallic transition above a critical LaAlO3 thickness. We explain that the high conductivity observed at the TiO2 /LaO interface and the lack of similar conductivity at the SrO/AlO2 interface are inherent in the atomic geometry of the system. A large interfacial hopping matrix element between cations causes the formation of a bound electron state at the TiO2 /LaO interface. This mechanism for the formation of interfacial bound states suggests a robust means for tuning conductivities at various oxide heterointerfaces.
@article{arxiv.0904.4734,
title = {Fundamental asymmetry in interfacial electronic reconstruction between insulating oxides},
author = {Hanghui Chen and Alexie M. Kolpak and Sohrab Ismail-Beigi},
journal= {arXiv preprint arXiv:0904.4734},
year = {2009}
}