English

Emerging two-dimensional conductivity at Mott-band insulator interface

Materials Science 2024-01-31 v1

Abstract

Intriguingly conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here we address the (001), (110), and (111) interfaces between the LaTiO3_{3} Mott- and large band gap KTaO3_{3} insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wide band insulators. Here the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO3_{3} and LaTiO3_{3} which, due to a small gap in the LaTiO3_{3} results in its sensitivity to the crystal structure, yields metalization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO3_{3}/KTaO3_{3}~(110) where the ''polar`` arguments are not applicable and on the emergence of superconductivity in these structures.

Keywords

Cite

@article{arxiv.2401.16813,
  title  = {Emerging two-dimensional conductivity at Mott-band insulator interface},
  author = {I. V. Maznichenko and S. Ostanin and D. Maryenko and V. K. Dugaev and E. Ya. Sherman and P. Buczek and I. Mertig and M. Kawasaki and A. Ernst},
  journal= {arXiv preprint arXiv:2401.16813},
  year   = {2024}
}
R2 v1 2026-06-28T14:31:22.794Z