Molecular beam epitaxy growth of cadmium telluride structures on hexagonal boron nitride

Adam Krzysztof Szczerba; Julia Kucharek; Jan Pawłowski; Takashi Taniguchi; Kenji Watanabe; Wojciech Pacuski

doi:10.1021/acsomega.3c05699

Molecular beam epitaxy growth of cadmium telluride structures on hexagonal boron nitride

Materials Science 2023-12-13 v1

Authors: Adam Krzysztof Szczerba , Julia Kucharek , Jan Pawłowski , Takashi Taniguchi , Kenji Watanabe , Wojciech Pacuski

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Abstract

We investigate the feasibility of epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time on molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures. Growth of quantum wells on two dimensional, almost perfectly flat hBN appears to be very different from growth on bulk substrates, in particular it requires 70-100 $^\circ$ C lower temperatures.

Keywords

molecular beam epitaxy cadmium telluride hexagonal boron nitride quantum wells two-dimensional substrates photoluminescence

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@article{arxiv.2311.04650,
  title  = {Molecular beam epitaxy growth of cadmium telluride structures on hexagonal boron nitride},
  author = {Adam Krzysztof Szczerba and Julia Kucharek and Jan Pawłowski and Takashi Taniguchi and Kenji Watanabe and Wojciech Pacuski},
  journal= {arXiv preprint arXiv:2311.04650},
  year   = {2023}
}

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submitted to ACS Omega, 7 pages, 8 figures

Molecular beam epitaxy growth of cadmium telluride structures on hexagonal boron nitride

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