Magnetically active vacancy related defects in irradiated GaN layers

L. Kilanski; F. Tuomisto; R. Szymczak; R. Kruszka

doi:10.1063/1.4745776

Magnetically active vacancy related defects in irradiated GaN layers

Materials Science 2012-08-29 v3

Authors: L. Kilanski , F. Tuomisto , R. Szymczak , R. Kruszka

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Abstract

We present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3...8.3x10^17 cm^-3 showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T = 5 K with coercive field of about H_C = 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically-active defects with respect to the total Ga- vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.

Keywords

semiconductor nanowire growth point defects in solids magnetocaloric effect

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@article{arxiv.1203.1142,
  title  = {Magnetically active vacancy related defects in irradiated GaN layers},
  author = {L. Kilanski and F. Tuomisto and R. Szymczak and R. Kruszka},
  journal= {arXiv preprint arXiv:1203.1142},
  year   = {2012}
}

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3 pages, 3 figures

Magnetically active vacancy related defects in irradiated GaN layers

Abstract

Keywords

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