Indexing Fe-phases in/on GaN using x-ray powder diffraction

Mauro Rovezzi

Indexing Fe-phases in/on GaN using x-ray powder diffraction

Materials Science 2012-08-17 v1

Authors: Mauro Rovezzi

Abstract

This document reports the x-ray powder diffraction main reflections (intensity threshold >= 100) for possible Fe-related phases forming during the metal-organic vapor phase epitaxy (MOVPE) growth of Fe in NH_3/H_2 mixture on wurtzite-GaN/sapphire. The 2\theta values are given for Cu K\alpha_1 radiation (1.5406 \AA) in the range 25-100 deg (ordered by increasing 2\theta). The GaN(000l) and Al_2O_3(000l) are also reported for reference.

Keywords

semiconductor nanowire growth

Cite

@article{arxiv.1208.3420,
  title  = {Indexing Fe-phases in/on GaN using x-ray powder diffraction},
  author = {Mauro Rovezzi},
  journal= {arXiv preprint arXiv:1208.3420},
  year   = {2012}
}

Comments

1 table and 27 references. The data are obtained from the Inorganic Crystal Structures Database (ICSD, http://icsd.fiz-karlsruhe.de/). The access to ICSD has been provided by the European Synchrotron Radiation Facility (ESRF)

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