Graphene Side Gate Engineering

Ching-Tzu Chen; Tony Low; Hsin-Ying Chiu; Wenjuan Zhu

doi:10.1109/LED.2011.2180355

Graphene Side Gate Engineering

Mesoscale and Nanoscale Physics 2014-10-29 v1

Authors: Ching-Tzu Chen , Tony Low , Hsin-Ying Chiu , Wenjuan Zhu

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Abstract

Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore myriads of typical side gated devices such as symmetric dual side gates and asymmetric single side gate biasing, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.

Keywords

graphene transport and valleytronics graphene bilayers graphene electronic transport

Cite

@article{arxiv.1410.7498,
  title  = {Graphene Side Gate Engineering},
  author = {Ching-Tzu Chen and Tony Low and Hsin-Ying Chiu and Wenjuan Zhu},
  journal= {arXiv preprint arXiv:1410.7498},
  year   = {2014}
}

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3 pages, 4 figures

Graphene Side Gate Engineering

Abstract

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