High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very obvious and followed the metallic electrode behavior of numerical simulations, while the theoretically predicted negative quantum capacitance was not observed, possibility due to the over-estimated or weakened interactions between the graphene nanoribbon and side-gate electrodes.
@article{arxiv.1410.8778,
title = {High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes},
author = {Yang Wang and Xiaolong Chen and Weiguang Ye and Zefei Wu and Yu Han and Tianyi Han and Yuheng He and Yuan Cai and Ning Wang},
journal= {arXiv preprint arXiv:1410.8778},
year = {2015}
}