We study the effect of a local potential shift induced by a side electrode on the edge modes at the boundary between gapped and ungapped bilayer graphene. A potential shift close to the gapped-ungapped boundary causes the emergence of unprotected edge modes, propagating in both directions along the boundary. These counterpropagating edge modes allow edge backscattering, as opposed to the case of valley-momentum-locked edge modes. We then calculate the conductance of a bilayer graphene wire in presence of finger-gate electrodes, finding strong asymmetries with energy inversion and deviations from conductance quantization that can be understood with the gate-induced unprotected edge modes.
@article{arxiv.2309.12013,
title = {Electrostatic tuning of bilayer graphene edge modes},
author = {Hira Ali and Llorenç Serra},
journal= {arXiv preprint arXiv:2309.12013},
year = {2023}
}