Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the recent demonstration of magneto-ionic devices using hydrogen ions presented relatively fast magnetization toggle switching, tsw ~ 100 ms, at room temperature. However, the operation speed may need to be significantly improved to be used for modern electronic devices. Here, we demonstrate that the speed of proton-induced magnetization toggle switching largely depends on proton-conducting oxides. We achieve ~1 ms reliable (> 103 cycles) switching using yttria-stabilized zirconia (YSZ), which is ~ 100 times faster than the state-of-the-art magneto-ionic devices reported to date at room temperature. Our results suggest further engineering of the proton-conducting materials could bring substantial improvement that may enable new low-power computing scheme based on magneto-ionics.
@article{arxiv.2005.02005,
title = {Fast magneto-ionic switching of interface anisotropy using yttria-stabilized zirconia gate oxide},
author = {Ki-Young Lee and Sujin Jo and Aik Jun Tan and Mantao Huang and Dongwon Choi and Jung Hoon Park and Ho-Il Ji and Ji-Won Son and Joonyeon Chang and Geoffrey S. D. Beach and Seonghoon Woo},
journal= {arXiv preprint arXiv:2005.02005},
year = {2020}
}