Voltage-driven 180∘ magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180∘ magnetization switching at room temperature by combining first-principles calculations and temperature-dependent magnetization dynamics simulation. The electric field (E) induced interface charge is found to allow a giant modulation of the magnetic anisotropy (K) of the nanomagnet. Particularly K is revealed to vary linearly with respect to E and the epitaxial strain. Magnetization dynamics simulations using the so-obtained K show that both in-plane and perpendicular 180∘ switching can be achieved by E pulses. The temperature effect renders the 180∘ switching as probability events. Statistical analysis indicates a fast (around 4 ns) and low-error-probability 180∘ switching achievable at room temperature by controlling the magnitude of E and the pulse width. The study inspires the rational design of miniaturized nanoscale spintronic devices where thermal fluctuation has a great impact.
@article{arxiv.1702.03670,
title = {Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature},
author = {Min Yi and Hongbin Zhang and Bai-Xiang Xu},
journal= {arXiv preprint arXiv:1702.03670},
year = {2017}
}