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Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature

Materials Science 2017-09-12 v2

Abstract

Voltage-driven 180^\circ magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180^\circ magnetization switching at room temperature by combining first-principles calculations and temperature-dependent magnetization dynamics simulation. The electric field (EE) induced interface charge is found to allow a giant modulation of the magnetic anisotropy (KK) of the nanomagnet. Particularly KK is revealed to vary linearly with respect to EE and the epitaxial strain. Magnetization dynamics simulations using the so-obtained KK show that both in-plane and perpendicular 180^\circ switching can be achieved by EE pulses. The temperature effect renders the 180^\circ switching as probability events. Statistical analysis indicates a fast (around 4 ns) and low-error-probability 180^\circ switching achievable at room temperature by controlling the magnitude of EE and the pulse width. The study inspires the rational design of miniaturized nanoscale spintronic devices where thermal fluctuation has a great impact.

Keywords

Cite

@article{arxiv.1702.03670,
  title  = {Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature},
  author = {Min Yi and Hongbin Zhang and Bai-Xiang Xu},
  journal= {arXiv preprint arXiv:1702.03670},
  year   = {2017}
}

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