Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface

L. Liang; J. Shan; Q. H. Chen; J. M. Lu; G. R. Blake; T. T. M. Palstra; G. E. W. Bauer; B. J. van Wees; J. T. Ye

doi:10.1103/PhysRevB.98.134402

Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface

Mesoscale and Nanoscale Physics 2018-10-10 v1

Authors: L. Liang , J. Shan , Q. H. Chen , J. M. Lu , G. R. Blake , T. T. M. Palstra , G. E. W. Bauer , B. J. van Wees , J. T. Ye

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Abstract

We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.

Keywords

magnetoresistance paramagnetic insulator platinum interface ionic liquid gate spin hall magnetoresistance spintronic devices

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@article{arxiv.1808.06266,
  title  = {Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface},
  author = {L. Liang and J. Shan and Q. H. Chen and J. M. Lu and G. R. Blake and T. T. M. Palstra and G. E. W. Bauer and B. J. van Wees and J. T. Ye},
  journal= {arXiv preprint arXiv:1808.06266},
  year   = {2018}
}

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13 pages, 5 figures

Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface

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