Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With ALL-Laser MBE we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.
@article{arxiv.1610.06885,
title = {Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy},
author = {Qingyu Lei and Maryam Golalikhani and Bruce A. Davidson and Guozhen Liu and D. G. Schlom and Qiao Qiao and Yimei Zhu and Ravini U. Chandrasena and Weibing Yang and Alexander X. Gray and Elke Arenholz and Andrew K. Farrar and Dmitri A. Tenne and Minhui Hu and Jiandong Guo and Rakesh K. Singh and X. X. Xi},
journal= {arXiv preprint arXiv:1610.06885},
year = {2016}
}