Related papers: Constructing oxide interfaces and heterostructures…
Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and…
Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality,…
I propose to use laser heating both for the substrate and the thermal evaporation sources in a vacuum chamber operating at pressures from XHV to values where the mean free path of the particles approaches or slightly exceeds the…
Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory…
The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In…
Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between three-dimensional materials. However, these interfaces can only…
Unlike widely explored complex oxide heterostructures grown along [001], the study of [111]-oriented heterointerfaces are very limited thus far. One of the main challenges is to overcome the polar discontinuity that hinders the epitaxy of…
Thin film synthesis methods developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a…
Among very low disorder systems of condensed matter, the high mobility two-dimensional electron gas confined in gallium arsenide/aluminum gallium arsenide heterostructures holds a privileged position as platform for the discovery of new…
Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as…
Molecular beam epitaxy (MBE), a workhorse of the semiconductor industry, has progressed rapidly in the last few decades in the development of novel materials. Recent developments in condensed matter and materials physics have seen the rise…
A novel laser molecular beam epitaxy (LMBE) system for the fabrication of atomically controlled oxides superlattices and an x-ray diffractometer that measures spatially-resolved x-ray diffraction spectra have been developed based on the…
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In…
We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam…
In designing material functionalities for transition metal oxides, lattice structure and d-orbital occupancy are key determinants. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic…
Molecular beam epitaxy (MBE) is a state-of-the-art technique for depositing thin films with precise stoichiometric control. However, when depositing oxides of perovskite-type ABO3, this process becomes challenging as controlling the flux…
SrMoO$_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique under a…
Understanding fundamental properties of materials is necessary for all modern electronic technologies. Toward this end, the fabrication of new ultrapure thin film materials is critical to discover and understand novel properties that can…
Atomically engineered oxide multilayers and superlattices display unique properties responsive to the electronic and atomic structures of the interfaces. We have followed the growth of ferroelectric BaTiO3 on SrRuO3 electrode with in situ…
We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the…