The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties.
@article{arxiv.1410.2024,
title = {Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene},
author = {Andrea Iagallo and Shinichi Tanabe and Stefano Roddaro and Makoto Takamura and Yoshiaki Sekine and Hiroki Hibino and Vaidotas Miseikis and Camilla Coletti and Vincenzo Piazza and Fabio Beltram and Stefan Heun},
journal= {arXiv preprint arXiv:1410.2024},
year = {2015}
}