Quantum Hall effect in bilayer and multilayer graphenes with finite gate voltage
Mesoscale and Nanoscale Physics
2009-11-13 v1 Strongly Correlated Electrons
Abstract
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in finite-magnetic-field formalism, and observed crossover of integer quantum Hall effect from two independent monolayer type system to strongly coupled bilayer systems by changing the ratio of interlayer hopping energy and the gate voltage. We also discuss the case of multilayer systems with Bernal stacking
Cite
@article{arxiv.0804.4599,
title = {Quantum Hall effect in bilayer and multilayer graphenes with finite gate voltage},
author = {Masaaki Nakamura and Lila Hirasawa and Ken-Ichiro Imura},
journal= {arXiv preprint arXiv:0804.4599},
year = {2009}
}
Comments
4 pages, 3 figures