English

Theory of integer quantum Hall effect in insulating bilayer graphene

Mesoscale and Nanoscale Physics 2014-06-20 v3

Abstract

A variational ground state for insulating bilayer graphene (BLG), subject to quantizing magnetic fields, is proposed. Due to the Zeeman coupling, the layer anti-ferromagnet (LAF) order parameter in fully gapped BLG gets projected onto the spin easy plane, and simultaneously a ferromagnet order, which can further be enhanced by exchange interaction, develops in the direction of the magnetic field. The activation gap for the ν=0\nu=0 Hall state then displays a crossover from quadratic to linear scaling with the magnetic field, as it gets stronger, and I obtain excellent agreement with a number of recent experiments with realistic strengths for the ferromagnetic interaction. A component of the LAF order, parallel to the external magnetic field, gives birth to additional incompressible Hall states at filling ν=±2\nu=\pm 2, whereas the remote hopping in BLG yields ν=±1\nu=\pm 1 Hall states. Evolution of the LAF order in tilted magnetic fields, scaling of the gap at ν=2\nu=2, the effect of external electric fields on various Hall plateaus, and different possible hierarchies of fractional quantum Hall states are highlighted.

Keywords

Cite

@article{arxiv.1203.6340,
  title  = {Theory of integer quantum Hall effect in insulating bilayer graphene},
  author = {Bitan Roy},
  journal= {arXiv preprint arXiv:1203.6340},
  year   = {2014}
}

Comments

Published version: 5 pages, 2 figures (Supplementary: 6 pages, 2 figures); New references, typos corrected

R2 v1 2026-06-21T20:41:26.112Z