English

Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Mesoscale and Nanoscale Physics 2014-10-28 v2

Abstract

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

Keywords

Cite

@article{arxiv.1405.5679,
  title  = {Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene},
  author = {C. J. Chua and M. R. Connolly and A. Lartsev and T. Yager and S. Lara-Avila and S. Kubatkin and S. Kopylov and V. I. Fal'ko and R. Yakimova and R. Pearce and T. J. B. M. Janssen and A. Ya. Tzalenchuk and C. G. Smith},
  journal= {arXiv preprint arXiv:1405.5679},
  year   = {2014}
}

Comments

5 pages, 5 figures