This article presents a detector system consisting of three components, a CMOS imaging array, a gaseous-detector structure with a Micromegas layout and a UV-photon sensitive CsI reflective photocathode. All three elements have been monolithically integrated using simple post-processing steps. The Micromegas structure and the CMOS imaging chip are not impacted by the CsI deposition. The detector operated reliably in He/isobutane mixtures and attained charge gains with single photons up to a level of 6 \cdot 10^4. The Timepix CMOS array permitted high resolution imaging of single UV-photons. The system has an MTF50 of 0.4 lp/pixel which corresponds to app. 7 lp/mm.
@article{arxiv.1003.2083,
title = {A UV Sensitive Integrated Micromegas with Timepix Readout},
author = {Joost Melai and Amos Breskin and Marco Cortesi and Yevgen Bilevych and Martin Fransen and Harry van der Graaf and Jan Visschers and Victor Blanco Carballo and Cora Salm and Jurriaan Schmitz},
journal= {arXiv preprint arXiv:1003.2083},
year = {2015}
}
Comments
4 pages with 8 figures. Submitted to Nucl. Instr. and Meth. A (Elsevier) for proceedings of VCI 2010.