Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.
@article{arxiv.1804.02358,
title = {A universal description of III-V/Si epitaxial growth processes},
author = {I. Lucci and S. Charbonnier and L. Pedesseau and M. Vallet and L. Cerutti and J. -B. Rodriguez and E. Tournie and R. Bernard and A. Letoublon and N. Bertru and A. Le Corre and S. Rennesson and F. Semond and G. Patriarche and L. Largeau and P. Turban and A. Ponchet and C. Cornet},
journal= {arXiv preprint arXiv:1804.02358},
year = {2018}
}
Comments
includes the manuscript file and the supplemental materials