Alloying mechanisms for epitaxial nanocrystals
Materials Science
2007-05-23 v2
Abstract
The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this letter. Intermixing during growth, surface diffusion and intra-island diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for dome-shaped Ge:Si (001) islands. For samples grown at a faster rate, intermixing during growth was reduced. Si surface diffusion dominates during H annealing whereas Ge surface diffusion and intra-island diffusion prevail during annealing in a PH environment.
Keywords
Cite
@article{arxiv.cond-mat/0701710,
title = {Alloying mechanisms for epitaxial nanocrystals},
author = {M. S. Leite and G. Medeiros-Ribeiro and T. I. Kamins and R. Stanley Williams},
journal= {arXiv preprint arXiv:cond-mat/0701710},
year = {2007}
}