Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.
@article{arxiv.2007.10484,
title = {Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique},
author = {Anthony McFadden and Aranya Goswami and Michael Seas and Corey Rae H. McRae and Ruichen Zhao and David P. Pappas and Christopher J. Palmstrøm},
journal= {arXiv preprint arXiv:2007.10484},
year = {2020}
}