A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications

Renaud Robin; Salim Touati; Karim Segueni; Olivier Millet; Lionel Buchaillot

A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications

Other Computer Science 2008-12-18 v1

Authors: Renaud Robin , Salim Touati , Karim Segueni , Olivier Millet , Lionel Buchaillot

Abstract

This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane. Using four electrodes, this structure enables four states which allowed large deflections (4 $\mu$ m) with low actuation voltage (7,5V). This design presents also a good contact force and improve the restoring force of the structure. As an example of application, a Single Pole Double Throw (SPDT) for 24GHz applications, based on this design, has been simulated.

Keywords

cmos circuit design

Cite

@article{arxiv.0805.0934,
  title  = {A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications},
  author = {Renaud Robin and Salim Touati and Karim Segueni and Olivier Millet and Lionel Buchaillot},
  journal= {arXiv preprint arXiv:0805.0934},
  year   = {2008}
}

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Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838)

A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications

Abstract

Keywords

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