相关论文: The ultra-sensitive electrical detection of spin R…
We present pulsed electrically detected magnetic resonance (EDMR) measurements at low magnetic fields using posphorus-doped silicon with natural isotope composition as a model system. Our measurements show that pulsed EDMR experiments, well…
We propose to use optical detection of magnetic resonance (ODMR) to measure the decoherence time T_{2} of a single electron spin in a semiconductor quantum dot. The electron is in one of the spin 1/2 states and a circularly polarized laser…
Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing.…
In recent years, a variety of solid-state qubits has been realized, including quantum dots, superconducting tunnel junctions and point defects. Due to its potential compatibility with existing microelectronics, the proposal by Kane based on…
Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are…
Free electron laser-powered pulsed electron paramagnetic resonance (EPR) experiments performed at 240 GHz / 8.56 T on the crystalline organic radical BDPA reveal a tip-angle dependent resonant frequency. Frequency shifts as large as 11 MHz…
Electron paramagnetic resonance (EPR) can provide unique insight into the chemical structure and magnetic properties of dopants in oxide and semiconducting materials that are of interest for applications in electronics, catalysis, and…
SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of…
Electron Spin Resonance (ESR) can microscopically probe both conduction electrons (ce) and local moment (LM) spin systems in different materials. A ce spin resonance (CESR) is observed in metallic systems based on light elements or with…
An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…
Photoelectrical detection of magnetic resonance (PDMR) offers a scalable alternative to optical readout of spin defects in semiconductors and is particularly promising for near-infrared (NIR) emitters, where photodetection is often…
The effect of dipolar and exchange interactions within pairs of paramagnetic electronic states on Pauli-blockade-controlled spin-dependent transport and recombination rates during magnetic resonant spin excitation is studied numerically…
We report on an analytical description of spin-dependent electronic transition rates which are controlled by a radiation induced spin-Rabi oscillation of weakly spin-exchange and spin-dipolar coupled paramagnetic states (S=1/2). The…
The investigation of paramagnetic species (such as point defects, dopants, and impurities) in solid-state electronic devices is significant because of their effect on device performance. Conventionally, these species are detected and imaged…
Rabi measurements in atomic vapor cells are of current interest in a range of microwave imaging and sensing experiments, but are increasingly in a parameter space outside of theoretical studies of coherence defined by spin-exchange…
Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-band single-photon emission and its optically addressable…
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy…
We demonstrate electron spin polarization detection and electron paramagnetic resonance (EPR) spectroscopy using a direct current superconducting quantum interference device (dc-SQUID) magnetometer. Our target electron spin ensemble is…
Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the…
Electron Paramagnetic Resonance experiments show that the decay of Rabi oscillations of ensembles of spin qubits depends noticeably on the microwave power and more precisely on the Rabi frequency, an effect recently called "driven…