相关论文: The effects of radiation on Gallium Arsenide radia…

GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 \times 10^{14}$~cm$^{-2}$ 24GeV/c proton fluence. The as fabricated Ti-GaAs barrier…

Characterization of strip and pixel AC-LGAD devices with both laser TCT and probe station (IV/CV) will be shown on AC-LGADs irradiated with 1 MeV reactor neutrons at JSI/Ljubljana and with 400~MeV protons at FNAL ITA to fluences from…

Space-grade Si and GaAs solar cells were irradiated with 15 & 40 MeV Li ions. Illuminated (AM0 condition) and unilluminated I-V curves reveal that the effect of high-energy Li ion irradiation has produced similar effects to that of proton…

The absorption length, $\lambda_{abs}$, of light with wavelengths between 0.95 and 1.30$~\mu$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been…

Low Gain Avalanche Detectors (LGADs) are key components for precise timing measurements in high-energy physics experiments, including the High Luminosity upgrades of the current LHC detectors. Their performance is, however, limited by…

In order to understand the effects of a space radiation environment on cross-strip germanium detectors, we investigated the effects of high-energy proton damage on a COSI detector and the capabilities of high-temperature annealing in…

Effect of atomic disordering induced by irradiation with fast neutrons on the properties of the normal and superconducting states of polycrystalline samples FeSe has been studied. The irradiation with fast neutrons of fluencies up to…

We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs…

Studies of annealing at temperatures up to 450$^\circ$C with LGADs irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2$ was already improved at 5 minutes of annealing at…

We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by…

An irradiation campaign was conducted to provide guidance in the selection of materials and components for the radiation hardening of LED lights for use in CERN accelerator tunnels. This work describes the effects of gamma-rays on…

The presented study investigates the effects of low fluences from $5\times10^{12}$ up to $1\times10^{14}$ particles/cm$^{2}$ of 60MeV proton and neutron irradiation on n-type Low Gain Avalanche Detectors (nLGADs). An nLGAD is a silicon…

This study demonstrates a substantial enhancement of breakdown voltage in $\beta$-Ga$_2$O$_3$ Schottky diodes through an approach that combines fast neutron irradiation with controlled post-irradiation electro-thermal annealing. Devices…

Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9…

The very high momentum particle identification detector proposed for the ALICE upgrade is a focusing RICH using a C4F10 gaseous radiator. For the detection of Cherenkov photons, one of the options currently under investigation is to use a…

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…

A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,…

A Cherenkov detector based on an array of five lead fluoride ($\beta$-PbF$_2$) crystals of size 30 mm$\times$30 mm$\times$160 mm read out by reverse-type avalanche photodiodes (APD's) of active area 10 mm$\times$10 mm was used to measure…

The effect of atomic disorder induced by neutrons irradiation on superconducting and normal state properties of polycrystalline LaFeAsO_0.9F_0.1 was investigated. The irradiation of the sample by a moderate neutron fluence F = 1.6*1019…

GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which are…