相关论文: Simple 8085 microprocessor compatible I/O card

At the technical level, the goal of Interledger is to provide an architecture and a minimal set of protocols to enable interoperability between any value transfer systems. The Interledger protocol is a protocol for inter-blockchain payments…

We report on the design, fabrication, and preliminary testing of a 150 zone array built in a `surface-electrode' geometry microfabricated on a single substrate. We demonstrate transport of atomic ions between legs of a `Y'-type junction and…

A simple circuit for the presentation of the signals from Multi-gap Resistive Plate Chambers (MRPCs) to standard existing digitization electronics is described. The circuit is based on "off-the-shelf" discrete components. An optimization of…

This paper presents an automated approach for designing processors that support a subset of the RISC-V instruction set architecture (ISA) for a new class of applications at Extreme Edge. The electronics used in extreme edge applications…

The RVfpga course offers a solid introduction to computer architecture using the RISC-V instruction set and FPGA technology. It focuses on providing hands-on experience with real-world RISC-V cores, the VeeR EH1 and the VeeR EL2, developed…

Modern high-performance computing architectures (Multicore, GPU, Manycore) are based on tightly-coupled clusters of processing elements, physically implemented as rectangular tiles. Their size and aspect ratio strongly impact the achievable…

Using a pair of p- and n-type semiconductors separated by a nanoscale vacuum gap, we introduce an optoelectronics element prototype, "photonic p-n junction", as an analogue of the electronic p-n junction, which is demonstrated to serve as…

Over the last four years, we have developed a series of lectures, labs and project assignments aimed at introducing enough technology so that students from a mix of disciplines can design and build innovative interface devices.

We demonstrate a pogo pin package for a superconducting quantum processor specifically designed with a nontrivial layout topology (e.g., a center qubit that cannot be accessed from the sides of the chip). Two experiments on two nominally…

We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…

Encoding information onto optical fields is the backbone of modern telecommunication networks. Optical fibers offer low loss transport and vast bandwidth compared to electrical cables, and are currently also replacing coaxial cables for…

The miniaturization and integration of electronic circuitry has not only made the enormous increase in performance of semiconductor devices possible but also spawned a myriad of new products and applications ranging from a cellular phone to…

To enhance the undergraduate and graduate engineering education for nanoscale materials, devices and systems, we report a multi-disciplinary course based on the integration of theory, hands-on laboratory and hands-on computation into a…

The Multiple Sensor Interface is a simple sensor interface that works with USB, RS485 and GPIO. It allows one to make measurements using a variety of sensors based on the change of inductance, resistance, capacitance, and frequency using…

Phase-sensitive detection (PSD) is an important experimental technique that allows signals to be extracted from noisy data. PSD is also used in modulation spectroscopy and is used in the stabilization of optical sources. Commercial lock-in…

While most instruction set architectures (ISAs) are only available to use through the purchase of a restrictive commercial license, the RISC-V ISA presents a free and open-source alternative. Due to this availability, many free and…

We present a study of thin-film molybdenum resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5-1.5 keV ion cleaning-activation of NbN before Mo deposition which allows to obtain a high-quality Mo/NbN…

Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…

Amidst the COVID-19 pandemic, with many organizations, schools, colleges, and universities transitioning to virtual platforms, students encountered difficulties in acquiring PCs such as desktops or laptops. The starting prices, around…

Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against short-channel effects, high air stability, and potential for…