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The parameters of two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure were determined by an acoustical (contactless) method in the delocalized electrons region ($B\le$2.5T). Nonlinear effects in Surface Acoustic Wave (SAW)…

介观与纳米尺度物理 · 物理学 2015-06-25 I. L. Drichko , A. M. Diakonov , V. D. Kagan , A. M. Kreshchuk , T. A. Polyanskaya , I. G. Savel'ev , I. Yu. Smirnov , A. V. Suslov

The propagation of a surface acoustic wave (SAW) on GaAs/AlGaAs heterostructures is studied in the case where the two-dimensional electron gas (2DEG) is subject to a strong magnetic field and a smooth random potential with correlation…

介观与纳米尺度物理 · 物理学 2009-10-28 Andreas Knaebchen , Yehoshua Levinson , Ora Entin-Wohlman

The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionisation and parallel conduction. Here, we study phonon scattering in 2D…

介观与纳米尺度物理 · 物理学 2025-03-03 Y. Ashlea Alava , K. Kumar , C. Harsas , P. Mehta , P. Hathi , C. Chen , D. A. Ritchie , A. R. Hamilton

We provide a quantum mechanical description of phonon amplification in a heterostructure consisting of a two-dimensional electron gas (2DEG) stacked on top of a piezoelectric material. An applied drift voltage effectively creates a…

介观与纳米尺度物理 · 物理学 2026-05-14 Eric Chatterjee , Daniel Soh , Matt Eichenfield

We present thermopower measurements on a high electron mobility two-dimensional electron gas (2DEG) in a thin suspended membrane.We show that the small dimension of the membrane substantially reduces the thermal conductivity compared to…

介观与纳米尺度物理 · 物理学 2015-06-03 M. Schmidt , G. Schneider , Ch. Heyn , A. Stemmann , W. Hansen

We predict an extreme sensitivity to the dissipative losses of the resonant interaction of bulk phonons with a 2D defect in a solid. We show that the total resonant reflection of the transverse phonon at the 2D defect, described earlier…

统计力学 · 物理学 2009-10-31 Yu. A. Kosevich , E. S. Syrkin

Electrically detected electron spin resonance (EDESR) signals were acquired as a function of temperature in the 0.3-4.2 K temperature range in a AlGaAs/GaAs multiple quantum well sample at the filling factor at 5.7 T. In the particular…

介观与纳米尺度物理 · 物理学 2009-11-07 Eugene Olshanetsky , Manyam Pilla , Joshua D. Caldwell , Shu-chen Liu , Clifford R. Bowers , Jerry A. Simmons , John L. Reno

We investigate the time dependent thermal relaxation of a two-dimensional electron system in the fractional quantum Hall regime where ballistic phonons are used to heat up the system to a non-equilibrium temperature. The thermal relaxation…

介观与纳米尺度物理 · 物理学 2009-10-31 F. Schulze-Wischeler , U. Zeitler , M. Monka , F. Hohls , R. J. Haug , K. Eberl

We describe experiments with spin-polarized atomic hydrogen gas adsorbed on liquid $^{4}$He surface. The surface gas density is increased locally by thermal compression up to $5.5\times10^{12}$ cm$^{-2}$ at 110 mK. This corresponds to the…

其他凝聚态物理 · 物理学 2009-11-11 J. Järvinen , J. Ahokas , S. Vasiliev

Heat transport by acoustic phonons in 2D materials is fundamentally different from that in 3D crystals because the out-of-plane phonons propagate in a unique way that strongly depends on tension and bending rigidity. Since in-plane and…

介观与纳米尺度物理 · 物理学 2022-04-15 H. Liu , M. Lee , M. Šiškins , H. S. J. van der Zant , P. G. Steeneken , G. J. Verbiest

We present measurements of optical interband absorption in the fractional quantum Hall regime in a GaAs quantum well in the range 0 < nu < 1. We investigate the mechanism of singlet trion absorption, and show that its circular dichroism can…

We describe a theoretical framework for the interpretation of time-resolved phonon absorption experiments carried out in the fractional quantum Hall regime of a magnetically quantized two-dimensional electron system (2des). The only phonons…

介观与纳米尺度物理 · 物理学 2009-10-31 Keith A. Benedict , R. K. Hills , C. J. Mellor

We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum…

介观与纳米尺度物理 · 物理学 2009-09-07 V. N. Stavrou , G. P. Veropoulos

The absorption coefficient for surface acoustic waves in a piezoelectric insulator in contact with a GaAs/AlGaAs heterostructure (with two-dimensional electron mobility $\mu= 1.3\times 10^5 cm^2/V\cdot s)$ at T=4.2K) via a small gap has…

介观与纳米尺度物理 · 物理学 2009-10-31 I. L. Drichko , A. M. Diakonov , A. M. Kreshchuk , T. A. Polyanskaya , I. G. Savel'ev , I. Yu. Smirnov , A. V. Suslov

The effect of spin-orbit (and Darwin) interaction on a 2D electron gas subject to a radial symmetric, inhomogeneous $1/r$-magnetic field is discussed analytically in a perturbative and non-perturbative manner. For this purpose, we…

介观与纳米尺度物理 · 物理学 2023-06-21 Dominik Sidler , Michael Ruggenthaler , Angel Rubio

We study phonon-mediated adsorption and desorption of an electron at dielectric surfaces with deep polarization-induced surface potentials where multi-phonon transitions are responsible for electron energy relaxation. Focusing on…

其他凝聚态物理 · 物理学 2015-05-27 R. L. Heinisch , F. X. Bronold , H. Fehske

Two-dimensional electron gasses (2DEG) in InAs quantum wells proximitized by aluminum are promising platforms for topological qubits based on Majorana zero modes. However, there are still substantial uncertainties associated with the nature…

介观与纳米尺度物理 · 物理学 2022-04-12 Prashant Chauhan , Candice Thomas , Tyler Lindemann , Geoffrey C. Gardner , J. Gukelberger , M. J. Manfra , N. P. Armitage

In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange…

The optical absorption of a many (continuum) polaron gas is derived in the framework of a variational approach at zero temperature and weak or intermediate electron-phonon coupling strength. We derive a compact formula for the optical…

强关联电子 · 物理学 2009-10-31 J. Tempere , J. T. Devreese

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…

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