相关论文: Hall-like effect induced by spin-orbit interaction

We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the…

An extension of Drude model is proposed that accounts for spin and spin-orbit interaction of charge carriers. Spin currents appear due to combined action of the external electric field, crystal field and scattering of charge carriers. The…

We study the dependence of the intrinsic spin Hall effect on the crystal symmetry and geometry of experiment. The spin current is obtained and the Hall voltage caused by the polarization of the electron spins is computed. The unique…

As a relativistic quantum mechanical effect, it is shown that the electric field exerting a transverse force on an electron spin 1/2 only if the electron is moving and the spin is polarized along the electric field. The spin force, analogue…

The electric Hall effect (EHE) is a newly identified Hall effect characterized by a perpendicular electric field inducing a transverse charge current in two-dimensional (2D) systems. Here, we propose a spin and valley version of EHE. We…

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…

We observe the inverse spin Hall effect in a two-dimensional electron gas confined in AlGaAs/InGaAs quantum wells. Specifically, we find that an inhomogeneous spin density induced by the optical injection gives rise an electric current…

We consider the impact of electron-electron interactions on the temperature dependence of the anomalous Hall effect in disordered conductors. The microscopic analysis is carried out within the diagrammatic approach of the linear response…

Spin-orbit interactions in two-dimensional electron liquids are responsible for many interesting transport phenomena in which particle currents are converted to spin polarizations and spin currents and viceversa. Prime examples are the spin…

Charge-to-spin conversion in inhomogeneous systems is studied theoretically. We consider free electrons subject to impurities with spin-orbit interaction and with spatially modulated distribution, and calculate spin accumulation and spin…

The quantum Hall effect emerges when two-dimensional samples are subjected to strong magnetic fields at low temperatures: Topologically protected edge states cause a quantized Hall conductivity in multiples of $e^2/h$. Here we show that the…

We predict theoretically that, when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall…

Spin Hall effect at finite wave vector in a ferromagnetic conductor is theoretically studied by calculating the spin density as the linear response to an applied electric field. The cases of a spin-orbit interaction due to random impurities…

The quantum Hall regime in a smooth random potential is considered when two disorder-broadened Zeeman levels overlap strongly. Spin-orbit coupling is found to cause a drastic change in the percolation network which leads to a strong…

With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring,…

Spin accumulation and spin transfer torques induced by Spin Hall Effect in bi-layer structures comprising ferromagnetic and paramagnetic materials are theoretically investigated. The charge and spin diffusion equations taking into account…

We analyze the contribution of the inhomogeneous magnetic field induced by an electrical current to the spin Hall effect in metals. The Zeeman coupling between the field and the electron spin leads to a spin dependent force, and to spin…

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…

We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…

Using the four-terminal Landauer-B\"{u}ttiker formula and Green's function approach, we calculate numerically the spin-Hall conductance in a two-dimensional junction system with the Rashba spin-orbit (SO) coupling and disorder. We find that…