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相关论文: Metal-insulator transition in CMR materials

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We explore the nature of the metal-insulator transition in $\beta^{\prime\prime}$-(BEDT-TTF)$_{2}$Hg(SCN)$_{2}$Cl by x-ray, electrical transport, ESR, Raman and infrared investigations. Magnetic and vibrational spectroscopy concurrently…

The presence of free spins in granular Al films is directly demonstrated by $\mu$SR measurements. A Mott transition is observed by probing the increase of the spin-flip scattering rate of conduction electrons as the nano-size metallic…

强关联电子 · 物理学 2015-06-04 N. Bachar , S. Lerer , S. Hacohen-Gourgy , B. Almog , H. Saadaoui , E. Morenzoni , G. Deutscher

Thin films of Pr0.5Ca0.5MnO3 manganites exhibiting charge/orbital-ordered properties with colossal magnetoresistance have been synthesized by the pulsed laser deposition technique on both (100)-SrTiO3 and (100)-LaAlO3 substrates. The…

强关联电子 · 物理学 2009-11-10 P. Padhan , W. Prellier , Ch. Simon , R. C. Budhani

In a recent paper (Michalopolou A., Syskakis E. and Papastaikoudis C., 2001 J. Phys.: Cond. Mat. 13, 11615) the authors reported on the measurements of electrical resistivity and specific heat at zero magnetic field carried out on…

无序系统与神经网络 · 物理学 2009-11-07 E. Rozenberg , M. Auslender

A colossal insulator-to-metal transition in high-spin pyrite phase of $MnS_{2}$ has been experimentally observed \cite{colomns2}. There are two possibilities behind this colossal insulator-to-metal transition: (1) migration of $Mn$…

强关联电子 · 物理学 2021-10-06 Komal Kumari , Raman Sharma , Navinder Singh

By means of hybrid density functional theory we investigate the evolution of the structural, electronic and magnetic properties of the colossal magnetoresistance (CMR) parent compound LaMnO$_3$ under pressure. We predict a transition from a…

强关联电子 · 物理学 2012-05-08 J. He , M. -X. Chen , X. -Q Chen , C. Franchini

Polycrystalline Nd$_{1-x}$Eu$_{x}$NiO$_3$ ($0 \leq x \leq 0.5$) compounds were synthesized in order to investigate the character of the metal-insulator (MI) phase transition in this series. Samples were prepared through the sol-gel route…

强关联电子 · 物理学 2007-05-23 M. T. Escote , V. B. Barbeta , R. F. Jardim , J. Campo

We investigated the magnetoresistance (MR) effect of the pyrochlore oxide Nd2Ir2O7, which shows a metal-insulator transition at T_MI =33 K. A small positive MR effect was observed in the metallic state above T_MI, while a large negative MR…

强关联电子 · 物理学 2013-01-18 Kazuyuki Matsuhira , Masashi Tokunaga , Makoto Wakeshima , Yukio Hinatsu , Seishi Takagi

We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

无序系统与神经网络 · 物理学 2007-05-23 Alexander Punnoose , Alexander M. Finkel'stein

A recently found metal-insulator transition in a model for cyclotron resonance in a two-dimensional periodic potential is investigated by means of spectral properties of the time evolution operator. The previously found dynamical signatures…

介观与纳米尺度物理 · 物理学 2009-10-31 L. Hufnagel , M. Weiss , A. Iomin , R. Ketzmerick , S. Fishman , T. Geisel

We report the Sr substitution effect in an antiferromagnetic insulator LaMnAsO. The Sr doping limit is $x\sim$ 0.10 under the synthesis conditions, as revealed by x-ray diffractions indicate. Upon Sr doping, the room-temperature resistivity…

强关联电子 · 物理学 2012-05-10 Yunlei Sun , Jinke Bao , Chunmu Feng , Zhu'an Xu , Guanghan Cao

NaOsO$_{\text{3}}$ undergoes a metal-insulator transition (MIT) at 410 K, concomitant with the onset of antiferromagnetic order. The excitation spectra have been investigated through the MIT by resonant inelastic x-ray scattering (RIXS) at…

Oxygen-isotope effects on the intrinsic resistivity have been studied in high-quality epitaxial thin films of La_{0.75}Ca_{0.25}MnO_{3} and Nd_{0.7}Sr_{0.3}MnO_{3}. We found that the residual resistivity \rho_{o} increases by about 15(3)%…

强关联电子 · 物理学 2007-05-23 Guo-meng Zhao , D. J. Kang , W. Prellier , M. Rajeswari , H. Keller , T. Venkatesan , R. L. Greene

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Das Sarma , M. P. Lilly , E. H. Hwang , L. N. Pfeiffer , K. W. West , J. L. Reno

Measurements of the DC resistivity of under-doped cuprate superconductors have revealed a metal--insulator transition at low temperatures when superconductivity is suppressed by a very large magnetic field, with the resistivity growing…

超导电性 · 物理学 2007-05-23 Benjamin Morgan , D. M. Broun , Ruixing Liang , D. A. Bonn , W. N. Hardy , J. R. Waldram

Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing…

We address a recent experiment in which a strong decrease of the resistance of a superconducting film has been observed when a remote unbiased gate was placed above the film. Here we explain the experimental finding as a suppression of the…

超导电性 · 物理学 2009-11-11 K. Michaeli , A. M. Finkel'stein

We discuss a metal-insulator transition caused by random couplings of magnetic moments in itinerant systems. An analytic solution for the single particle Green function is derived from dynamical self consistency equations, the corresponding…

强关联电子 · 物理学 2007-05-23 B. Rosenow , R. Oppermann

A complex study of magnetic properties including dc magnetization, 1H NMR and magnetic torque measurements has been performed for the organic conductor kappa-(BETS)2Mn[N(CN)2]3 which undergoes a metal-insulator transition at T_MI~25K. NMR…

强关联电子 · 物理学 2012-04-17 O. M. Vyaselev , M. V. Kartsovnik , W. Biberacher , L. V. Zorina , N. D. Kushch , E. B. Yagubskii

Electrical resistivity as a function of temperature, pressure, and magnetic field was measured in high and low purity single crystals of BaVS$_3$ close to the critical pressure value $p_{cr}$$\approx$2 GPa, associated with the zero…

强关联电子 · 物理学 2007-12-21 N. Barišić , A. Akrap , H. Berger , L. Forró