相关论文: Weak Localization in Semiconductor Multi-Quantum W…
We consider magnetotransport in a disordered two-dimensional electron gas in the presence of a periodic modulation in one direction. Existing quasiclassical and quantum approaches to this problem account for Weiss oscillations in the…
We theoretically investigate the effects of the weak magnetization on the local density of states of mesoscopic proximity structures, where two superconducting terminals are attached to a side surface of the diffusive ferromagnet wire with…
We studied formation of charge density wave between valleys in a system with a double-well-like dispersive valence band relevant for the rhombohedral graphene trilayer. In a regime with 2 Fermi surfaces, electron- and hole-like: one of…
We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different…
We present here a novel approach to evaluation of the weak localization correction (WLC) to transport properties of a mesoscopic conductor. It is based on an extension of Keldysh technique and allows one to evaluate the full counting…
The local density of states of a degenerate semiconductor is investigated at low magnetic fields. In order to realize this experiment, we designed a strongly asymmetric double-barrier heterostructure with heavily doped contacts and study…
An effect of paramagnetic impurity located in a vicinity of a quantum well (QW) on spin polarization of the carriers in the QW is analyzed theoretically. Within approach of Bardeen's tunneling Hamiltonian the problem is formulated in terms…
Using the Feynman diagram techniques, we derive the finite-temperature conductivity and magnetoconductivity formulas from the quantum interference and electron-electron interaction, for a three-dimensional disordered Weyl semimetal. For a…
We discuss the influence of the electromagnetic environment and the electron-electron interaction on the weak localization correction to the conductivity of a disordered metal. The theory of this phenomenon for sufficiently high…
We consider the electronic transport in multi-terminal mesoscopic networks of weakly disordered metallic wires. After a brief description of the classical transport, we analyze the weak localisation (WL) correction to the four-terminal…
We define a current-conserving approximation for the local conductivity tensor of a disordered system which includes the effects of weak localization. Using this approximation we show that the weak localization effect in conductance is not…
We argue that broken-symmetry states with either spatially diagonal or spatially off-diagonal order are likely in the quantum Hall regime, for clean multiple quantum well (MQW) systems with small layer separations. We find that for MQW…
We calculate the weak localization correction in the double crossover to broken time-reversal and spin-rotational symmetry for a disordered microbridge or a short disordered wire using a scattering-matrix approach. Whereas the correction…
Electron transport in nonideal quantum wells (QW) with large-scale variations of energy levels is studied when two subbands are occupied. Although the mean fluctuations of these two levels are screened by the in-plane redistribution of…
The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature…
The influence of low to moderate frequency environments on Macroscopic Quantum Tunneling (MQT) in superconducting circuits is studied within the Im-F approach to evaluate tunneling rates. Particular attention is paid to two model…
The gate bias dependency of conductivity is examined in two Si quantum wells with well thickness tw = 7 nm and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non-monotonic…
At low temperatures, quantum corrections, originating from the interference of the many paths an electron may take between two points, tend to dominate the transport properties of two-dimensional conductors. These quantum corrections…
We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double- gate amorphous InGaZnO thin-film transistors.…
We compute the quantum correction due to weak localization for transport properties of disordered quasi-one-dimensional conductors, by integrating the Dorokhov-Mello-Pereyra-Kumar equation for the distribution of the transmission…