相关论文: Quantum dot self consistent electronic structure a…

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a…

We investigate non-equilibrium transport properties of a quantum dot in the Coulomb blockade regime under the condition of negligible inelastic scattering during the dwelling time of the electrons in the dot. Using the quantum kinetic…

We investigate theorerically the non-equilibrium transport through a molecular quantum dot as a function of gate and bias voltage, taking into account the typical situation in molecular electronics. In this respect, our study includes…

We have observed anomalous transport properties for a 50 nm Bi dot in the Coulomb-blockade regime. Over a range of gate voltages, Coulomb blockade peaks are suppressed at low bias, and dramatic structure appears in the current at higher…

We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the…

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…

We study the Coulomb blockade in a chaotic quantum dot connected to a lead by a single channel at nearly perfect transmission. We take into account quantum fluctuations of the dot charge and a finite level spacing for electron states within…

We investigate transient dynamic response of an Anderson impurity quantum dot to a family of ramp-up driving voltage applied to the single coupling lead. Transient current is calculated based on a hierarchical equations of motion formalism…

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…

Resonant tunneling through a quantum dot weakly coupled to Tomonaga-Luttinger liquids is discussed. The linear conductance due to sequential tunneling is calculated by solving a master equation for temperatures below and above the average…

The electrical conductance, thermal conductance, thermal power and figure of merit (ZT) of semiconductor quantum dots (QDs) embedded into an insulator matrix connected with metallic electrodes are theoretically investigated in the Coulomb…

We study an interacting single-level quantum dot weakly coupled to three electrodes. When two electrodes are biased by voltages with opposite polarities, while keeping the third lead (the stem) grounded, the current through the stem is a…

The fluctuations and the distribution of the conductance peak spacings of a quantum dot in the Coulomb-blockade regime are studied and compared with the predictions of random matrix theory (RMT). The experimental data were obtained in…

Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…

We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic…

We consider Coulomb blockade oscillations of thermoelectric coefficients of a single electron transistor based on a quantum dot strongly coupled to one of the leads. Analytic expression for the thermopower as a function of temperature $T$…

We study the effect of a dot-lead interaction on transport through a quantum dot hybridized to two semi-infinite Luttinger-liquid leads. A bosonization approach is applied to treat the interaction between charge fluctuations on the dot and…

This paper considers the self-consistent Coulomb interaction within arrays of self-assembled InAs quantum dots (QDs) which are embedded in a pn structure. Strong emphasis is being put on the statistical occupation of the electronic QD…

We theoretically investigate resonant tunneling through a linear array of quantum dots with subsequent tunnel coupling. We consider two limiting cases: (i) strong Coulomb blockade, where only one extra electron can be present in the array…

Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…