相关论文: Scaling Behavior and Variable Hopping Conductivity…

Quasi-two dimensional electron systems exhibit peculiar transport effects depending on their density profiles and temperature. A usual two dimensional electron system is assumed to have a $\delta$ like density distribution along the crystal…

The behaviour of the critical point between quantum Hall plateaux, as the Zeeman energy is varied, is analysed using modular symmetry of the Hall conductivities following from the law of corresponding states. Flow diagrams for the…

One parameter scaling of the Hall coefficient of cuprates has been well known for almost three decades, but still lacks a simple mathematical expression. Motivated by the recent phenomenological prediction of the universal scaling of the…

A set of stacked two-dimensional electron systems in a perpendicular magnetic field exhibits a three-dimensional version of the quantum Hall effect if interlayer tunneling is not too strong. When such a sample is in a quantum Hall plateau,…

The crossover from the quantum Hall regime to the Hall-insulator is investigated by varying the strength of the diagonal disorder in a 2d tight-binding model. The Hall and longitudinal conductivities and the behavior of the critical states…

We study the spin quantum Hall effect and transitions between Hall plateaus in quasi two-dimensional network models consisting of several coupled layers. Systems exhibiting the spin quantum Hall effect belong to class C in the symmetry…

In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and…

Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to…

We derive an empirical formula for the width of quantum Hall effect plateaus which is free of adjustable parameters. It describes the integer, fractional and $\nu = 0$ (Wigner insulator) quantum Hall effect in single heterojunctions. The…

Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $\nu =…

Recent experiments in the integer quantum Hall regime seem to find direct transitions from a quantum Hall state with Hall conductance $\sigma_{xy} = n e^2/h $ with integer $n > 1$, to an insulating state in weak magnetic fields. We study…

We have performed magnetotransport experiments in the high-temperature regime (up to 50 K) of the integer quantum Hall effect for two-dimensional electron gases in semiconducting heterostructures. While the magnetic field dependence of the…

The fractional quantum Hall (FQH) effect provides a paradigmatic example of a topological phase of matter. FQH edges are theoretically described via models belonging to the class of chiral Luttinger liquid (CLL) theories [1 (Wen, 2007)].…

Energetic disorder in disordered organic solids has been found to alter their physical parameters. Here, we have demonstrated, by means of Monte-Carlo simulation and experiments, that the electroluminescence (EL) spectrum is dependent on…

We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the…

The charging energy of a quantum dot is measured through the effect of its potential on the conductance of a second dot. This technique allows a measurement of the scaling of the dot's charging energy with the conductance of the tunnel…

We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal…

We have observed suppression of shot noise in the variable-range hopping regime for a two-dimensional electron gas whose localization length, xi, is controlled by a gate voltage. We have found that the suppression factor F (Fano factor) is…

The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…

We have performed low-temperature transport measurements on a GaAs two-dimensional electron system at low magnetic fields. Multiple temperature-independent points and accompanying oscillations are observed in the longitudinal resistivity…