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The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic…

The electronic structure of the nanolaminated transition metal carbide Ti2AlC has been investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured Ti L, C K and Al L emission spectra are compared with calculated spectra…

材料科学 · 物理学 2011-12-30 M. Magnuson , O. Wilhelmsson , J. -P. Palmquist , U. Jansson , M. Mattesini , S. Li , R. Ahuja , O. Eriksson

We propose a simple analytical model to explain possible appearance of the metallic conductivity in the two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ interface. Our model considers the interface within a macroscopic approach which is usual to…

材料科学 · 物理学 2016-01-20 V. A. Stephanovich , V. K. Dugaev

Motivated by studies of coexisting electron correlation and spin-orbit coupling effect in Na$_2$IrO$_3$ and a recent experiment of its 4d analogue Li$_2$RhO$_3$, we performed first-principles calculations of the rhodium oxide compound. The…

强关联电子 · 物理学 2013-03-20 Chao Cao , Yongkang Luo , Zhuan Xu , Jianhui Dai

While phonons and their related properties have been studied comprehensively in bulk materials, a thorough understanding of surface phonons for nanoscale objects remains elusive. Infra-red imaging methods with photons or electrons exist,…

The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental…

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure,…

We analyze the electronic structure of group III-V semiconductors obtained within full potential linearized augmented plane wave (FP-LAPW) method and arrive at a realistic and minimal tight-binding model, parameterized to provide an…

材料科学 · 物理学 2009-11-11 Ranjani Viswanatha , Sameer Sapra , Tanusri Saha-Dasgupta , D. D. Sarma

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and…

应用物理 · 物理学 2020-04-15 Sandip Lashkare , Udayan Ganguly

First-principles modeling of ferroelectric capacitors presents several technical challenges, due to the coexistence of metallic electrodes, long-range electrostatic forces and short-range interface chemistry. Here we show how these aspects…

材料科学 · 物理学 2011-03-03 Massimiliano Stengel , David Vanderbilt , Nicola A. Spaldin

Electrode-electrolyte interfaces are crucial for electrochemical energy conversion and storage. At these interfaces, the liquid electrolytes form electrical double layers (EDLs). However, despite more than a century of active research, the…

The 2D/3D construction of hybrid perovskite interfaces is gaining increasing attention due to their enhanced stability towards degradation without compromising the corresponding solar cell efficiency. Much of it is due to the interfacial…

材料科学 · 物理学 2025-07-17 Hrishit Banerjee , Md. Khaja Nazeeruddin , Sudip Chakraborty

Tailor-made magnetic nanostructures offer a variety of functionalities useful for technological applications. In this work, we explore the possibilities of realizing Fe nanostructures at the interfaces of 2D graphene and h-BN by ab initio…

材料科学 · 物理学 2013-10-22 Soumyajyoti Haldar , Pooja Srivastava , Olle Eriksson , Prasenjit Sen , Biplab Sanyal

Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the…

We apply density functional theory and the augmented spherical wave method to analyze the electronic structure of V2O3 in the vicinity of an interface to Al2O3. The interface is modeled by a heterostructure setup of alternating vanadate and…

强关联电子 · 物理学 2009-01-22 Udo Schwingenschloegl , Raymond Fresard , Volker Eyert

Augmented Reality (AR) and Virtual Reality (VR), require miniaturized displays with ultrahigh pixel densities. Here, we demonstrate an individually addressable subwavelength OLED pixel based on a nanoscale electrode capable of supporting…

Employing a first-principles and model Hamiltonian approach, we work out the electronic properties of polar-polar LaVO$_3$/KTaO$_3$ (LVO/KTO, 001) heterostrctures, with up to six layers of KTO and five layers of LVO. Our analyses indicate…

材料科学 · 物理学 2024-08-02 Shubham Patel , Narayan Mohanta , Snehasish Nandy , Subhendra D. Mahanti , A Taraphder

In photon upconverting core-shell nanoparticles, structure strongly dictates performance. Conventional imaging in scanning transmission electron microscopy has sufficient resolution to probe the atomic structure of these nanoparticles, but…

Two-dimensional election gases (2DEG), arising due to quantum confinement at interfaces between transparent conducting oxides, have received tremendous attention in view of electronic applications. The challenge is to find a material system…

材料科学 · 物理学 2022-01-24 Wahib Aggoune , Claudia Draxl

We investigate the effect of spatial doping of the Mott insulator LaVO$_3$ by inserting a few layers of the correlated metal SrVO$_3$ in multilayer geometries. Using density functional theory in combination with dynamical mean-field theory,…

强关联电子 · 物理学 2022-12-22 Sophie Beck , Claude Ederer
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