相关论文: Effect of initial spin polarization on spin dephas…
We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of…
The Helmholtz free energy F of the interacting 2-D electron fluid is calculated nonperturbatively using a mapping of the quantum fluid to a classical Coulomb fluid [Phys. Rev. Letters, vol. 87, 206404 (2001)]. For density parameters rs such…
The effect of weak localization on spin relaxation in a two-dimensional system with a spin-split spectrum is considered. It is shown that the spin relaxation slows down due to the interference of electron waves moving along closed paths in…
We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al$_{0.4}$Ga$_{0.6}$As barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and…
The compressibility of a two-dimensional electron system with spin in a spatially correlated random potential and a quantizing magnetic field is investigated. Electron-electron interaction is treated with the Hartree-Fock method. Numerical…
Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric…
For magnonics and spintronics applications, the spin polarization ($P$) of a transport current and the magnetic damping ($\alpha$) play a crucial role, e.g. for magnetization dynamics and magnetization switching applications. In particular,…
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation…
We report on the modification of the g-factor by an in-plane electric field in an In$_{0.031}$Ga$_{0.969}$As epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to independently determine…
In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*\mu_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct…
We present a general unifying theory for spin polarization decay due to the interplay of spin precession and momentum scattering that is applicable to both spin-1/2 electrons and spin-3/2 holes. Our theory allows us to identify and…
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…
Interest in femtosecond demagnetization experiments was sparked by Bigot's discovery in 1995. These experiments unveil the elementary mechanisms coupling the electrons' temperature to their spin order. Even though first quantitative models…
We employ the linear response theory to calculate the polarization rate of heavy quark spin in the presence of a strong magnetic field and the hot QCD matter, both of which are simultaneously generated in relativistic heavy-ion collisions.…
The acceleration of polarized electrons and protons in strong laser and plasma fields is a very attractive option to obtain polarized beams in the GeV range. We investigate the feasibility of particle acceleration in strong fields without…
We study theoretically the renormalization of the spin-orbit coupling constant of two-dimensional electrons by electron-electron interactions. We demonstrate that, similarly to the $g$ factor, the renormalization corresponds to the…
We present an investigation of electron-spin dynamics in p-doped bulk GaAs due to the electron-hole exchange interaction, aka the Bir-Aronov-Pikus mechanism. We discuss under which conditions a spin relaxation times for this mechanism is,…
Spin transport phenomena in solid materials suffer limitations from spin relaxation associated to disorder or lack of translational invariance. Ultracold atoms, free of that disorder, can provide a platform to observe phenomena beyond the…
We present full atomistic calculations of the spin-flip time (T$_{1}$) of electrons and holes mediated by acoustic phonons in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. At low magnetic field, the first-order…
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…