相关论文: Ab-initio GMR and current-induced torques in Au/Cr…
The maximum current-perpendicular-to-plane giant magnetoresistance is searched for in magnetic multilayers made of Co, Ni, and Cu with disorder levels similar to those found in room temperature experiments. The calculation is made possible…
We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is…
Spin-orbit torque nano-oscillators based on bilayers of ferromagnetic (FM) and nonmagnetic (NM) metals are ultra-compact current-controlled microwave signal sources. They serve as a convenient testbed for studies of spin-orbit torque…
We investigate spin-orbit torques of metallic CuAu-I-type antiferromagnets using spin-torque ferromagnetic resonance tuned by a dc-bias current. The observed spin torques predominantly arise from diffusive transport of spin current…
We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the…
Anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, is investigated under an applied hydrostatic pressure up to 2 GPa. The easy axis direction of the magnetization is inferred from the AMR saturation…
The spin-torque ferromagnetic resonance (ST-FMR) in a bilayer system consisting of a magnetic insulator such as Y3Fe5O12 and a normal metal with spin-orbit interaction such as Pt is addressed theoretically. We model the ST-FMR for all…
An applied electric current through a space-inversion asymmetric magnet induces spin-orbit torques (SOTs) on the magnetic moments, which holds much promise for future memory devices. We discuss general Green's function expressions suitable…
The properties of the archetypal Co/Cu giant magnetoresistance (GMR) spin-valve structure have been modified by the insertion of very thin (sub-monolayer) $\delta$-layers of various elements at different points within the Co layers, and at…
We present a comprehensive review of data and analysis of Giant (G) Magnetoresistance (MR) with Current-flow Perpendicular-to-layer-Planes (CPP-MR) of magnetic multilayers [F/N]n (n = number of repeats) with alternating nanoscale layers of…
The giant magnetoresistance (GMR) of ferromagnetic bilayers with a superconducting contact (F1/F2/S) is calculated in ballistic and diffusive regimes. As in spin-valve, it is assumed that the magnetization in the two ferromagnetic layers F1…
Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures have been investigated. Direct experimental evidence is given that inserting ferromagnetic layers into a granular structure significantly enhances the…
The responses of the electrical current and the current-induced spin transfer torque (CISTT) to an ac bias in addition to a dc bias in a magnetic tunnel junction are investigated by means of the time-dependent nonquilibrium Green function…
The giant magnetoresistance (GMR) and structure was investigated for electrodeposited Co/Cu multilayers prepared by a conventional galvanostatic/potentiostatic pulse combination from a pure sulfate electrolyte with various layer…
The field of spin electronics (spintronics) was initiated by the discovery of giant magnetoresistance (GMR) for which Fert[1] and Grunberg[2] were awarded the 2007 Nobel Prize for Physics. GMR arises from differential scattering of the…
The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed in manipulation of the magnetization direction by in-plane current. This implies the existence of an inverse…
Current-induced torques on ferromagnetic nanoparticles and on domain walls in ferromagnetic nanowires are normally understood in terms of transfer of conserved spin angular momentum between spin-polarized currents and the magnetic…
Giant or tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices. The effects rely on a conserved spin current passing between a reference and a sensing ferromagnetic electrode in a…
We reveal the giant magnetoresistance induced by the spin-polarized current in the ferromagnet (F_1)/topological insulator (TI)/ferromagnet (F_2) junction, where two ferromagnets are deposited on the diffusive surface of the TI. We can…
We report current-direction dependent or unidirectional magnetoresistance (UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$, that is several orders…