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Electrostatic screening between carbon nanotubes (CNTs) in a small CNT bundle leads to a switching behavior induced by electric field perpendicular to the bundle axis. Using a first-principles method, we investigate the electronic…

介观与纳米尺度物理 · 物理学 2010-10-06 Gunn Kim , J. Bernholc , Young-Kyun Kwon

Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25…

材料科学 · 物理学 2007-12-05 Yung-Fu Chen , M. S. Fuhrer

We propose a microscopic model for a nanoelectromechanical system made by a radio-frequency driven suspended carbon nanotube (CNT) in the presence of an external magnetic field perpendicular to the current. As a main result, we show that,…

介观与纳米尺度物理 · 物理学 2015-06-12 A. Nocera , C. A. Perroni , V. Marigliano Ramaglia , G. Cantele , V. Cataudella

Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…

其他凝聚态物理 · 物理学 2009-11-11 Olaf Wunnicke

Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of…

介观与纳米尺度物理 · 物理学 2016-05-30 Dingxun Fan , N Kang , Sepideh Gorji Ghalamestani , Kimberly A Dick , H Q Xu

In a recent paper Liang {\it et al.} [Nature {\bf 411}, 665 (2001)] showed experimentally, that metallic nanotubes, strongly coupled to external electrodes, may act as coherent molecular waveguides for electronic transport. The experimental…

介观与纳米尺度物理 · 物理学 2009-11-07 S. Krompiewski , J. Martinek , J. Barnas

The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field…

介观与纳米尺度物理 · 物理学 2009-11-07 Marcus Freitag , Sergei V. Kalinin , Dawn A. Bonnell , A. T. Johnson

In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS structure, opening a new route for the realization of…

介观与纳米尺度物理 · 物理学 2011-03-10 David Jimenez , Enrique Miranda , Andres Godoy

Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube…

介观与纳米尺度物理 · 物理学 2016-07-12 Robert McCoy , Fredrick Anderson , Eric L. Carter , Robinson L. Smith

Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics. The existing Schottky barrier-FET model for devices with…

材料科学 · 物理学 2018-10-01 Nan Fang , Kosuke Nagashio

Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting…

We study the quantum dynamics of ballistic electrons in rotating carbon nanotubes in the presence of a uniform magnetic field. When the field is parallel to the nanotube axis, the rotation-induced electric field brings about the spin-orbit…

介观与纳米尺度物理 · 物理学 2020-02-11 Márcio M. Cunha , Jonas R. F. Lima , Fernando Moraes , Sébastien Fumeron , Bertrand Berche

We report electrical transport measurements through a semiconducting single-walled carbon nanotube (SWNT) with three additional top-gates. At low temperatures the system acts as a double quantum dot with large inter-dot tunnel coupling…

介观与纳米尺度物理 · 物理学 2009-11-11 M. R. Graeber , W. A. Coish , C. Hoffmann , M. Weiss , J. Furer , S. Oberholzer , D. Loss , C. Schoenenberger

We investigate the electronic transport properties of semiconducting ($m$,$n$) carbon nanotubes (CNTs) on the mesoscopic length scale with arbitrarily distributed realistic defects. The study is done by performing quantum transport…

介观与纳米尺度物理 · 物理学 2018-11-26 Fabian Teichert , Andreas Zienert , Jörg Schuster , Michael Schreiber

Narrow carbon nanotubes (CNTs) desalinate water, mimicking water channels of biological membranes, yet the physics behind selectivity, especially, the effect of the membrane embedding CNTs on water and ion transfer, is still unclear. Here,…

材料科学 · 物理学 2020-12-22 Vadim Neklyudov , Viatcheslav Freger

We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide.…

材料科学 · 物理学 2009-11-10 S. Heinze , M. Radosavljevic , J. Tersoff , Ph. Avouris

In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy…

The equilibrium density of fluids under nanoconfinement can differ substantially from their bulk density. Using a mean-field approach to describe the energetic landscape near the carbon nanotube (CNT) wall, we obtain analytical results…

流体动力学 · 物理学 2015-06-11 Gerald J. Wang , Nicolas G. Hadjiconstantinou

The universal features of quantized thermal conductance of carbon nanotubes (CNTs) are revealed through theoretical analysis based on the Landauer theory of heat transport. The phonon-derived thermal conductance of semiconducting CNTs…

材料科学 · 物理学 2009-11-10 Takahiro Yamamoto , Satoshi Watanabe , Kazuyuki Watanabe

Miniaturized electronics require lightweight conductors that maintain high conductance under demanding conditions. CNT networks are promising candidates, but their transport is governed by inter-nanotube junctions where electron waves…