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相关论文: All-electron study of InAs and GaAs wurtzite: stru…

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We report the first quasiparticle calculations of the newly observed wurtzite polymorph of InAs and GaAs. The calculations are performed in the GW approximation using plane waves and pseudopotentials. For comparison we also report the study…

材料科学 · 物理学 2009-11-11 Z. Zanolli , F. Fuchs , J. Furthmueller , U. von Barth , F. Bechstedt

The wurtzite (wz) structure of CdS is analyzed using density functional theory within the generalized gradient approximation (GGA) and Hubbard correction (GGA+U). The total energy convergence evaluation is carried out concerning energy…

材料科学 · 物理学 2022-06-22 Ankan Biswas , S. R. Meher , Deepak K. Kaushik

The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spectral densities are obtained. The corresponding local and…

材料科学 · 物理学 2007-05-23 P. Jonnard , N. Capron , F. Semond , J. Massies , E. Martinez-Guerrero , H. Mariette

Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different…

介观与纳米尺度物理 · 物理学 2014-02-27 L. C. O. Dacal , A. Cantarero

We investigate the effect of basal-plane stacking faults on the structural, electronic, and polarization properties of wurtzite GaN and ZnO. This theoretical study is performed within density-functional theory (DFT) using periodic hexagonal…

We report calculated, electronic and related properties of wurtzite and zinc blende gallium nitrides (w-GaN, zb-GaN). We employed a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism.…

An oversight of some previous density functional calculations of the band gaps of wurtzite and cubic InN and of wurtzite GaN by Rinke et al. [Appl. Phys. Lett. 89,161919, 2006] led to an inaccurate and misleading statement relative to…

材料科学 · 物理学 2011-02-03 D. Bagayoko , L. Franklin , G. L. Zhao

Using the density functional theory (DFT) with the generalized gradient approximation (GGA), the structural and electronic properties of wurtzite AlN, GaN, InN, and their related alloys, Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N, were…

材料科学 · 物理学 2008-11-04 E. Lopez-Apreza , J. Arriaga , D. Olguin

We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k.p model. In the wurtzite phase, two energetically close conduction bands are of importance for the…

介观与纳米尺度物理 · 物理学 2017-06-21 Oliver Marquardt , Manfred Ramsteiner , Pierre Corfdir , Lutz Geelhaar , Oliver Brandt

The structural, electronic, dielectric and vibrational properties of zinc-blende (ZB) InAs were studied within the framework of density functional theory (DFT) by employing local density approximation and norm-conserving pseudopotentials.…

计算物理 · 物理学 2021-02-03 Waqas Mahmood , Arfan Bukhtiar , Muhammad Haroon , Bing Dong

First-principles calculations within the weighted density approximation (WDA) were performed for ground state properties of ferroelectric perovskites PbTiO$_3$, BaTiO$_3$, SrTiO$_3$, KNbO$_3$ and KTaO$_3$. We used the plane-wave…

材料科学 · 物理学 2009-11-10 Zhigang Wu , R. E. Cohen , D. J. Singh

The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite…

Crystal phase semiconductor heterostructures allow for electron confinement without uncertainties caused by chemical intermixing found in material heterostructures and are candidates for next generation optoelectronics devices ranging from…

材料科学 · 物理学 2023-08-16 Joseph Sink , Craig Pryor

A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are…

The electronic structure and chemical bonding of wurtzite-GaN investigated by N 1s soft x-ray absorption spectroscopy and N K, Ga M1, and Ga M2,3 emission spectroscopy is compared to that of pure Ga. The measurements are interpreted by…

材料科学 · 物理学 2011-12-30 Martin Magnuson , Maurizio Mattesini , Carina Höglund , Jens Birch , Lars Hultman

First-principles calculations were performed, and the results from the study of structural, electronic and elastic properties of zincblende III-arsenide binary compounds (BAs, AlAs, GaAs and InAs) are presented. These properties have been…

材料科学 · 物理学 2019-11-28 Umang Agarwal , Satish Chandra , Virendra Kumar

We present a new, all-electron implementation of the GW approximation and apply it to wurtzite ZnO. Eigenfunctions computed in the local-density approximation (LDA) by the full-potential linearized augmented-plane-wave (LAPW) or the…

材料科学 · 物理学 2009-11-07 Manabu Usuda , Noriaki Hamada , Takao Kotani , Mark van Schilfgaarde

An oversight of several previous results from local density approximation (LDA) calculations appear to have led to an incomplete, and hence misleading, characterization of the capability of density functional theory (DFT) to describe…

材料科学 · 物理学 2011-01-28 Diola Bagayoko , Lashounda Franklin , G. L. Zhao

In this paper, we propose an efficient implementation of combining Dynamical Mean field theory (DMFT) with electronic structure calculation based on the local density approximation (LDA). The pseudo-potential-plane-wave method is used in…

强关联电子 · 物理学 2015-06-03 Jian-Zhou Zhao , Jia-Ning Zhuang , Xiao-Yu Deng , Yan Bi , Ling-Cang Cai , Zhong Fang , Xi Dai

The description of realistic strongly correlated systems has recently advanced through the combination of density functional theory in the local density approximation (LDA) and dynamical mean field theory (DMFT). This LDA+DMFT method is…

强关联电子 · 物理学 2009-11-13 B. Amadon , F. Lechermann , A. Georges , F. Jollet , T. O. Wehling , A. I. Lichtenstein
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